集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 12V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 4V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 20GHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz |
| 描述与应用 | NPN硅外延 高频低噪声放大器/振荡器 应用 •高增益带宽积 FT =20 GHz的典型。 •高功率增益和低噪声系数; PG=17.5 dB，NF= 1.15 dB。在f =1.8 GHz的 |