集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 180~390 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN epitaxial planar type general amplification ■ Features • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 一般的放大 ■特点 •高正向电流传输比HFE •SSS迷你型封装，允许减小和变薄带包装的设备，通过自动插入 |