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Parameters:

  • Model:2SC5866 T106R
  • Manufacturer:HUABAN
  • Date Code:05+PB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:VLR
  • Package:SOT-323/SC-70/UMT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsMedium power transistor Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor
描述与应用中等功率晶体管 特点 1)高速开关。 (TF:典型:80ns的在IC=500毫安的) 2)低饱和电压,通常   (IB大于10mA IC=100mA时典型值150mV的) 3)感性负载和放电功率强 电容负载。 应用 低频小信号放大器 高速开关 结构 NPN硅外延平面型晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SC5866 T106R
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