集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
80V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
80V |
集电极连续输出电流IC
Collector Current(IC) |
300mA/0.3A |
截止频率fT
Transtion Frequency(fT) |
140MHz |
直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
150mV/0.15V |
耗散功率Pc
Power Dissipation |
2W |
| Description & Applications |
Silicon NPN epitaxial transistors description 2SD1007 is designed for audio frequency power amplifier application , especially in hybrid integrated circuits Features * low collector saturation voltage * world standard miniature package |
| 描述与应用 |
NPN硅外延晶体管 描述 2SD1007是专为音频功放中的应用， 特别是在混合集成电路 特点 *低集电极饱和电压 |