集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 180MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor LF featrues * ultrasmall size supports high density ,ultrasmall-sized hybird ic designs |
| 描述与应用 | NPN平面外延硅晶体管 LF featrues *超小尺寸，支持高密度，超小尺寸的摄录IC设计 |