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Parameters:

  • Model:2SD1781KRLT1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:AFR
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
32V
集电极连续输出电流IC
Collector Current(IC)
800mA/0.8A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsFeatures * Very Low VCE(sat). VCE(sat) = −0.1V(Typ.) (IC / IB= 500mA / 50mA) * High current capacity in compact package. * Complements the 2SB1197K. Structure Epitaxial planar type NPN silicon transistor
描述与应用特点 *非常低VCE(SAT)。 VCE(饱和)=-0.1V (IC / IB=500mA的/50MA) *高电流容量,在紧凑的封装。 *补充2SB1197K。 结构 外延平面型 NPN硅晶体管

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2SD1781KRLT1
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