集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 150V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 150V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 185~330 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type *For high breakdown voltage low-frequency and low-noise amplification Features *High collector to emitter voltage VCEO. *Low noise voltage NV. |
| 描述与应用 | * NPN硅外延平面型 *对于高击穿电压的低频和低噪声 放大 特点 *高集电极到发射极电压VCEO。 *低噪声电压NV。 |