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Parameters:

  • Model:2SD1821-S
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:PS
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
150V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
185~330
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications*Silicon NPN epitaxial planer type *For high breakdown voltage low-frequency and low-noise amplification Features *High collector to emitter voltage VCEO. *Low noise voltage NV.
描述与应用* NPN硅外延平面型 *对于高击穿电压的低频和低噪声 放大 特点 *高集电极到发射极电压VCEO。 *低噪声电压NV。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1821-S
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