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Parameters:

  • Model:2SD1823
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:1ZT
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
40V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
1000~2000
管压降VCE(sat)
Collector-Emitter Saturation Voltage
50mV
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications*Silicon NPN epitaxial planer type * low-frequency amplification Features *High foward current transfer ratio hFE. *Low collector to emitter saturation voltage VCE(sat) *High emitter to base voltage VEBO. *Low noise voltage NV.
描述与应用* NPN硅外延平面型 *低频放大 特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE(SAT) *高发射器基极电压VEBO。 *低噪声电压NV。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1823
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