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Parameters:

  • Model:2SD2150 T100S
  • Manufacturer:HUABAN
  • Date Code:05+ 05+NOPB600
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:CFS
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
290MHz
直流电流增益hFE
DC Current Gain(hFE)
270~560
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications applications Low Frequency Transistor Features * Low VCE(sat). * VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) * Excellent current gain characteristics. * Epitaxial planar type NPN silicon transistor
描述与应用 应用 低频晶体管 特点 *低VCE(SAT)。 * VCE(饱和)=0.2V (IC / IB=2A/0.1A) *优秀的电流增益特性。 *外延平面型硅NPN晶体管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD2150 T100S
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