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Parameters:

  • Model:2SD2211 T100Q
  • Manufacturer:HUABAN
  • Date Code: 05+NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DQQ
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
160V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
160V
集电极连续输出电流IC
Collector Current(IC)
1.5A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
2V
耗散功率Pc
Power Dissipation
2W
Description & Applications Power Transistor (160V , 1.5A) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A.
描述与应用 功率晶体管(160V,1.5A) 特点 1)高的击穿电压(BVCEO=160V)。 2)低集电极输出电容。    (典型值20pF的VCB=10V) 3)高转换频率(FT =80MHZ)。 4)补充2SB1275/2SB1236A的。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD2211 T100Q
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