集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 150V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 150V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 185~330 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 1V |
耗散功率Pc
Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV |
| 描述与应用 | NPN硅外延平面型 对于高击穿电压低噪声放大 互补2SB1463J的 特点 •高集电极 - 发射极电压（基本打开）VCEO •低噪声电压NV |