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Parameters:

  • Model:2SJ067200L
  • Manufacturer:HUABAN
  • Date Code:05+NOPB 05NOPB
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:5M
  • Package:sot-723

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
7V
最大漏极电流Id
Drain Current
-100mA/-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
15Ω @-10mA,-4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.5
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & ApplicationsSilicon P-channel MOSFET For switching circuits ■ Features • Ultra small package switching MOSFETs • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
描述与应用硅P沟道MOSFET 用于开关电路 ■特性 •超小型封装开关MOSFET •SSS迷你型包装,使瘦身的设备和 通过自动插入磁带包装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SJ067200L
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