最大源漏极电压Vds
Drain-Source Voltage |
50 V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage |
50 V |
漏极电流(Vgs=0V)IDSS
Drain Current |
－1.0~－3.0mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage |
0.3~6.0V |
耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
< FIELD-EFFECT TRANSISTOR > P channel junction type for low frequency amplify application 2SJ125 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE DESCRIPTION 2SJ125 is a small type resin sealed P channel junction type FET. It is especially designed for low frequency voltage amplify,analog switch application. FEATURE Small type for mounting. High lyfsl lyfsl = 4mS(typ) Low RDS(ON) RDS(ON)=220 Ω APPLICATION General purpose voltage amplify,analog switch circuit for stereo,cassette deck,VCR. |
| 描述与应用 |
<场效应晶体管> P沟道结型 低频放大应用 2SJ125 对于低频放大应用 P通道结型 说明 2SJ125是一个小密封型树脂P沟道结型场效应管。它是专为低频电压放大，模拟开关应用。 特点 小安装类型。 高lyfsl lyfsl = 4mS（典型值） 低RDS（ON）的RDS（ON）=220Ω 应用 通用电压放大，模拟开关电路立体声，盒式录音机，录像机。 |