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  • Model：2SJ179
  • Manufacturer：HUABAN
  • Date Code：5 07NOPB
  • Standard Package：1000
  • Min Order：10
  • Mark/silk print/code/type：PA
  • Package：SOT-89/SC-62

最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-1.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.4Ω @-500mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-2.2--3.0
耗散功率Pd
Power Dissipation		2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance Bidirectional zener diode for protection is incorporated between gate and source Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between drain and source
描述与应用MOS场效应晶体管 P-通道 MOS FET 用于高速开关 直接驱动5V电源IC 具有低导通电阻 保护纳入栅极和源极之间双向齐纳二极管 可以驱动感性负载没有保护电路由于漏极和源极之间的击穿电压提高

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2SJ179
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