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  • Model：2SK1399
  • Manufacturer：HUABAN
  • Date Code：06+ 05+NOPB3800
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：G12
  • Package：SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage 50V
最大栅源极电压Vgs(±) Gate-Source Voltage 7V
最大漏极电流Id Drain Current 100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 22Ω/Ohm @10mA,2.5V
开启电压Vgs（th） Gate-Source Threshold Voltage 0.9-1.5V
耗散功率Pd Power Dissipation 200mW/0.2W
Description & Applications MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Can be driven by a 3.0-V power source Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor Can be used complementary with the 2SJ185
描述与应用 MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK1399是一个N沟道垂直型MOS场效应管，它可以是 2.5 V电源驱动。 2SK1399由低电压驱动，并且不需要考虑 的驱动电流，它是适合的器具，包括录像机的摄像机，并 需要省电的立体声耳机。 特性 N沟道MOS场效应晶体管 用于高速开关 可以由一个3.0 V电源驱动 没有必要考虑驱动电流，因为它是高输入 阻抗 能够减少部件的数量通过省略偏置电阻 可用于与2SJ185互补

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