Please log in first
Home
Cart0

×

Parameters:

  • Model:2SK1582
  • Manufacturer:HUABAN
  • Date Code:05 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:G15
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current200mA/0.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.4Ω/Ohm @10mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-1.8V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor
描述与应用N沟道MOS FET作开关 直接用带有5V电源IC驱动 不必考虑驱动电流,因为它的高输入阻抗 能够减少部件的数量通过省略偏置电阻

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SK1582
*Title:
Message:
*Code: