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Parameters:

  • Model:2SK2033
  • Manufacturer:HUABAN
  • Date Code:12+ROHS 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:KP
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance8Ω/Ohm @10mA,2.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel Type High Speed Switching Applications Analog Switching Applications Features Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications High input impedance Low gate threshold voltage Excellent switching times Enhancement-mode
描述与应用东芝场效应晶体管的硅N通道类型 高速开关应用 模拟开关应用 特性 硅N沟道MOS型 高速开关应用 模拟开关应用 高输入阻抗 低栅极阈值电压 优良的开关时间 增强型

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2033
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