Home
Cart0
Inventory:0 Min Order:10
Parameters
Related model

×

Parameters:

  • Model:2SK2055
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:NA3
  • Package:TO-243AA

最大源漏极电压Vds Drain-Source Voltage100V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.24Ω/Ohm @1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-2.0V
耗散功率Pd Power Dissipation2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. Features MOS FIELD EFFECT TRANSISTOR New package intermediate between small signal and power types Gate can be driven by 1.5 V Low ON resistance
描述与应用MOS场效应晶体管 N沟道MOS FET高速开关 2SK2055是一个N沟道MOS场效应管的垂直型和 是一种开关元件,可以直接驱动的输出 IC工作在5 V。 该产品具有低导通电阻和一流的开关 特点,是理想的驱动执行器和DC/ DC 转换器。 特性 MOS场效应晶体管 小信号和新的软件包之间的中间 电源类型 栅极可以由1.5 V驱动 低导通电阻

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SK2055
*Title:
Message:
*Code: