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  • Model：2SK2158
  • Manufacturer：HUABAN
  • Date Code：09nopb 05+NOPB100
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：G23
  • Package：SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage7V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance16Ω/Ohm @10mA,2.5V
开启电压Vgs（th） Gate-Source Threshold Voltage0.5-1.1V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Capable of drive gate with 1.5 V Because of high input impedance, there is no need to consider driving current Bias resistance can be omitted, enabling reduction in total number of parts
描述与应用MOS场效应晶体管 N沟道MOS FET 高速开关 2SK2158是一个N沟道垂直型MOS场效应管，具有工作电压低至1.5 V。由于它可以 一个低电压驱动，这是没有必要的，以考虑 2SK2158是驱动电流，适合用于在低电压 立体声耳机套和摄像机等便携式系统。 特性 N沟道MOS FET高速开关 能够用1.5 V驱动门 由于输入阻抗高，也没有必要考虑驱动电流 偏压电阻可以省略，能够减少部分总数

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2158
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