| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.35Ω/Ohm @1A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon N-Channel MOS FET High speed power switching Features Silicon N-Channel MOS FET High speed power switching application Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for DC-DC converter, motor drive, power switch, solenoid drive |
| 描述与应用 | N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 2.5 V栅极驱动器可驱动从3 V源 适用于DC-DC转换器，电机驱动，电源开关，螺线管驱动 |