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Parameters:

  • Model:2SK2552
  • Manufacturer:HUABAN
  • Date Code:05+NOPB 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:J6
  • Package:SOT-523/SC-75/USM

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.2~0.45ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1~-1v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•JUNCTION FIELD EFFECT TRANSISTOR •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA)
描述与应用•结型场效应晶体管 •N沟道硅结型场效应晶体管 •高正向转移导纳 1000μs典型值。 (IDSS= 100μA) 1600μs典型值。 (IDSS= 200μA)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2552
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