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Parameters:

  • Model:2SK2825
  • Manufacturer:HUABAN
  • Date Code:12+rohs 05+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:KK
  • Package:SOT-523/SSM

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance7Ω/Ohm @10mA,2.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type For Portable Equipment High Speed Switch Applications Analog Switch Applications Features Silicon N Channel MOS Type For Portable Equipment High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: Vth = 0.5~1.0 V Small package
描述与应用东芝场效应晶体管的硅N沟道MOS类型 对于便携式设备 高速开关应用 模拟开关应用 特性 硅N沟道MOS型 对于便携式设备 高速开关应用 模拟开关应用 高输入阻抗 1.5 V门驱动 低栅极阈值电压VTH =0.5〜1.0 V 小型封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2825
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