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Parameters:

  • Model:2SK2858
  • Manufacturer:HUABAN
  • Date Code:05+ 05+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:G24
  • Package:SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3Ω/Ohm @10A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-1.8V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. he 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Can be driven by a 2.5-V power source Low gate cut-off voltage
描述与应用MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK2857是一个开关装置,可以直接驱动 由5V电源。 他2SK2857功能低通态电阻和优良的 开关特性,是适合于应用程序,如致动器的驱动程序。 特性 N沟道MOS场效应晶体管 用于高速开关 可以由一个2.5 V的电源 低栅极截止电压

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2858
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