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Parameters:

  • Model:2SK2926
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:K2926
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current15A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.042Ω/Ohm @8A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.5-2.5V
耗散功率Pd Power Dissipation25W
Description & ApplicationsSilicon N Channel MOS FET High Speed Power Switching Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS(on)= 0.042Ω typ 4V gate drive devices High speed switching
描述与应用硅N沟道MOS FET 高速电源开关 特性 硅N沟道MOS FET 高速电源开关 低导通电阻RDS(ON)=0.042Ω典型 4V栅极驱动装置 高速开关

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2926
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