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Parameters:

  • Model:2SK3121
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:KU
  • Package:SOT-89/SC-62/PCP

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.115Ω/Ohm @1.5A,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.3V
耗散功率Pd Power Dissipation3.5W
Description & ApplicationsN-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching 2.5V drive
描述与应用N-沟道硅MOSFET 超高速开关应用 特性 N-沟道硅MOSFET 超高速开关应用 低导通电阻 超高速开关 2.5V驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3121
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