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  • Model:2SK3376TK-C
  • Manufacturer:HUABAN
  • Date Code:04+
  • Standard Package:5000
  • Min Order:10
  • Mark/silk print/code/type:3C
  • Package:SOT-623/TESM3

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.27~0.48ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.2~-1.2v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•Field Effect Transistor Silicon N Channel Junction Type Application for Ultra-compact ECM
描述与应用•场效应晶体管的硅N沟道结型 超紧凑ECM应用

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