Please log in first
Home
Cart0
Inventory:88400 Min Order：10
Parameters
Related model

×

Parameters：

  • Model：2SK3503-T1
  • Manufacturer：HUABAN
  • Date Code：08+rohs 05+08NOPB100
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：E1
  • Package：SOT-523/SC-75

最大源漏极电压Vds Drain-Source Voltage16V
最大栅源极电压Vgs(±) Gate-Source Voltage7V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.005Ω/Ohm @10mA,4V
开启电压Vgs（th） Gate-Source Threshold Voltage0.5-1.1V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there’s no need to consider a drive current Since bias resistance can be omitted, the number of components required can be reduced
描述与应用MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK3503一个N沟道垂直MOS FET。因为它 可以由低至1.5 V的电压，这是不 必要考虑驱动电流，这FET是理想的作为 执行器的低电流的便携式系统，如耳机 音响和摄像机。 特性 N沟道MOS场效应晶体管 用于高速开关 支持自动安装 门可以由一个1.5 V电源 由于其高输入阻抗，有没有需要考虑的驱动电流 由于偏置电阻可以省略，可以减少所需的部件数量

×

Online inquiry：

* From：
To：
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product：
2SK3503-T1
*Title：
Message：
*Code：