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  • Model:2SK374-P
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:2BP
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
55v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-55v
漏极电流(Vgs=0V)IDSS
Drain Current
1~3ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-5v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•Silicon N-Channel Junction FET •For low-frequency amplification •For switching Features lLow noise-figure (NF) lHigh gate to drain voltage VGDO lMini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing
描述与应用•硅N沟道结型场效应管 •对于低频放大 •切换功能 LLOW噪声系数(NF) lHigh栅漏电压VGDO lMini型封装,让瘦身套和自动 通过插入磁带/盒包装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK374-P
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