最大源漏极电压Vds
Drain-Source Voltage | 10V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -6V |
漏极电流(Vgs=0V)IDSS
Drain Current | 320mA-600mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -6V |
耗散功率Pd
Power Dissipation | 1W |
| Description & Applications | High Frequency FETs.
GaAs N-Channel MES FET.
For UHF medium output power amplification.
Features
. Large collector dissipation PC.
. Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | 高频场效应管, 砷化镓N沟道MES场效应管 ,用于于超高频中等输出功率放大, 大集电极耗散PC ,小功率型封装，通过带/盒包装允许缩减集的大小和自动插入. |