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  • Model:2SK932-24
  • Manufacturer:HUABAN
  • Date Code:05+ 05+NOPB2600
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:E24
  • Package:SOT-23/SC-59/CP

最大源漏极电压Vds
Drain-Source Voltage
15v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-15v
漏极电流(Vgs=0V)IDSS
Drain Current
14.5~24ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.2~-1.4v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsN-channel junction silicon FET High-Frequency Low=noise Amp Applications Applications AM tuner RF amp, low-noise amp Features Adoption of FBET process Very low noise figure Very small-sized package permitting 2SK932-applied sets to be made smaller and slimmer
描述与应用N沟道结硅FET 高频 低噪声放大器应用 应用 AM调谐器RF放大器,低噪声放大器 特点 采纳FBET过程 非常低的噪声系数 非常小的封装允许2SK932应用设置更小和更薄

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK932-24
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