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Parameters:

  • Model:3SK133A
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:U46
  • Package:SOT-143

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD Features MOS FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD Suitable for use as RF amplifier in UHF TV tuner Low Ciss High gain Low NF
描述与应用MOS场效应晶体管 射频放大器。 VHF电视调谐器 N-沟道硅双栅MOS场效应晶体管 4PIN MINI模具 特性 MOS场效应晶体管 射频放大器 UHF电视调谐 N-沟道硅双栅MOS场效应晶体管 4 引脚 迷你模具 适合用于UHF电视调谐器中RF放大器 Ciss低 高增益 低NF

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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3SK133A
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