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Parameters:

  • Model:3SK151-GR
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:UH
  • Package:SOT-143/SOT-24/SC-61

最大源漏极电压Vds Drain-Source Voltage15V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-0.15--1.5/0--1
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsFeatures SILICON N-CHANNEL DUAL GATE MOS FET TV TUNER VHF MIXER APPLICATIONS VHF RF AMPLIFIER APPLICATIONS High conversion gain Low noise figure
描述与应用特性 硅N沟道双栅MOS FET 电视调谐器甚高频混频器应用 甚高频射频放大器应用 高转换增益 低噪声系数

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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3SK151-GR
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