最大源漏极电压Vds
Drain-Source Voltage | 8V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -6V |
漏极电流(Vgs=0V)IDSS
Drain Current | |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -1V -- -4V |
耗散功率Pd
Power Dissipation | 150mW/0.15W |
| Description & Applications | GaAs N-channel Dual Gate MES FET.
Description
The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.
Features
.Low voltage operation
.Low noise: NF = 1.2dB (typ.) at 800MHz
.High gain: Ga = 20dB (typ) at 800MHz
.High stability
Application.
UHF band amplifier, oscillator.
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor. |
| 描述与应用 | 砷化镓N沟道双栅MES FET. 3SK166A是一个N沟道双栅砷化镓 MES 场效应管,UHF频段的低噪声放大。该电路的匹配所有UHF频带，性能优良，输入阻抗的优化设计。 应用 UHF频段放大器，振荡器. 低电压操作, 低噪音：NF=1.2分贝 高增益：GA =20分贝. 高稳定性 ,超高频频段放大器，振荡器. |