最大源漏极电压Vds
Drain-Source Voltage | 13V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -4.5V |
漏极电流(Vgs=0V)IDSS
Drain Current | 10mA-25mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -3.5V |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | MES FIELD EFFECT TRANSISTOR.
RF AMP. FOR UHF TV TUNER. N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR.
FEATURES
. Suitable for use as RF amplifier in UHF TV tuner.
. Low Crss : 0.02 pF TYP.
. High GPS : 20 dB TYP.
. Low NF : 1.1 dB TYP. |
| 描述与应用 | 射频放大器,用于超高频电视调谐器 ,砷化镓N沟道双栅MES场效应晶体管, 适合用于超高频电视调谐器中的RF放大器, 低CRSS：0.02 pF 高GPS：20分贝 .低噪声系数：1.1分贝. |