最大源漏极电压Vds
Drain-Source Voltage | 13V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -3.5V |
漏极电流(Vgs=0V)IDSS
Drain Current | 15mA-21mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -3.5V |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | GaAs N-Channel MES FET ,UHF Low-noise Amplifier ,Low NF, For low voltage operation ,MINI Type package suitable for small equipment, tape and magazine types for automatic insertion are available . |
| 描述与应用 | 砷化镓N沟道MES场效应管, 超高频低噪声放大器, 低NF ,用于低电压操作, 迷你型包装适合小型设备，带盒类型可用于自动插入. |