最大源漏极电压Vds
Drain-Source Voltage | 13V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -6V |
漏极电流(Vgs=0V)IDSS
Drain Current | 8.5mA-35mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -3.5V |
耗散功率Pd
Power Dissipation | 200mW/0.2W |
| Description & Applications | High Frequency FETs.
GaAs N-Channel MES FET.
For VHF-UHF amplification.
Features:
. Low noise-figure (NF)
. Large power gain PG
. Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | 高频场效应管. 砷化镓N沟道MES 场效应管. 用于甚高频-超高频放大, 低噪声系数（NF）, 大功率增益PG, 迷你型包装，通过带/盒包装允许缩减集的大小和自动插入. |