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  • Model：3SK241-R
  • Manufacturer：HUABAN
  • Date Code：05+
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：DUR
  • Package：SOT-143

最大源漏极电压Vds
Drain-Source Voltage		13V
栅源极击穿电压V(BR)GS
Gate-Source Voltage		-6V
漏极电流(Vgs=0V)IDSS
Drain Current		8.5mA-35mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage		-3.5V
耗散功率Pd
Power Dissipation		200mW/0.2W
Description & ApplicationsHigh Frequency FETs. GaAs N-Channel MES FET. For VHF-UHF amplification. Features: . Low noise-figure (NF) . Large power gain PG . Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
描述与应用高频场效应管. 砷化镓N沟道MES 场效应管. 用于甚高频-超高频放大, 低噪声系数（NF）, 大功率增益PG, 迷你型包装，通过带/盒包装允许缩减集的大小和自动插入.

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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3SK241-R
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