Home
Cart0

×

Parameters:

  • Model:3SK318
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:YB
  • Package:SOT-343/CMPAK-4/SC70-4

最大源漏极电压Vds Drain-Source Voltage6V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current20mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.0V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsSilicon N-Channel Dual Gate MOS FET UHF RF Amplifier Features •Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) •Excellent cross modulation characteristics •Capable low voltage operation;
描述与应用硅N沟道双栅MOS FET UHF射频放大器 •低噪音特点;(NF=1.4 dB(典型值),在f=900兆赫) •优秀的交叉调制特性 •低电压工作能力;

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
3SK318
*Title:
Message:
*Code: