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Parameters:

  • Model:5HN01CPA-TB
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:YC
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.4V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
描述与应用N-沟道硅MOSFET 超高速开关应用 •低导通电阻。 •超高速开关。 •4V驱动器

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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5HN01CPA-TB
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