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Parameters:

  • Model:BC847BPDW1T1
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:BF
  • Package:SOT-363/SC-88

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -50V/50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -45V/45V
集电极连续输出电流IC Collector Current(IC) -100mA/100mA
截止频率fT Transtion Frequency(fT) 100MHz
直流电流增益hFE DC Current Gain(hFE) 200~475
管压降VCE(sat) Collector-Emitter Saturation Voltage 600mV
耗散功率Pc Power Dissipation 380mW
Description & Applications Features •Dual General Purpose Transistors •Pb−Free Package is Available
描述与应用 特点 •双通用晶体管 •无铅包装是可用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BC847BPDW1T1
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