集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −45V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 220~475 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -250mV/-0.25V |
耗散功率Pc
PoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BC847BL3 |
| 描述与应用 | PNP硅晶体管自动对焦 •对于AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压 互补类型：BC847BL3 |