集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 100V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 130MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 1.5W |
| Description & Applications | MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel • PNP Complement is BCP53T1 |
| 描述与应用 | 中功率NPN硅高电流晶体管 表面贴装 特点 •高电流：1.0安培 SOT-223封装，可以使用波或回流焊接。所形成的线索在焊接热应力吸收，消除模具损坏的可能性 •可在12毫米编带和卷轴 使用BCP56T1到责令7 inch/1000的单位卷轴 使用BCP56T3责令13 inch/4000单位卷轴 •PNP补语是BCP53T1 |