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Parameters:

  • Model:BF1101WR
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:NC
  • Package:SOT-343

Drain-Source Voltage (Vds)  7V

Vgs(±)

Gate-Source Voltage

 
Drain Current (Id)  30MA
Drain-Source On-State (Rds)  

Vgs (th)

Gate-Source Threshold Voltage

 
Power dissipation (Pd)  0.2W
Description & Applications  N-channel dual-gate MOS-FETs
* Short channel transistor with high forward transfer admittance to input 
capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz
* Partly internal self-biasing circuit to ensure good cross-modulation 
performance during AGC and good 
DC stabilization.
APPLICATIONS
* VHF and UHF applications with 3 to 7 V supply voltage, such as 
television tuners and professional communications equipment.

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF1101WR
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