集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 250MHz |
直流电流增益hFE
DC Current Gain(hFE) | 60~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistor For general small-signal RF applications up to 300 MHz in amplifier,mixer and oscillator circuits |
| 描述与应用 | NPN硅RF晶体管 对于一般的小信号射频应用 最多到300 MHz放大器， 混频器和振荡器电路 |