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Parameters:

  • Model:BF579
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:G7
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
−25mA
截止频率fT
Transtion Frequency(fT)
1.75GHz
直流电流增益hFE
DC Current Gain(hFE)
20~90
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-10V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsSilicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features High transition frequency Low distortion
描述与应用硅PNP平面RF晶体管 应用 UHF/ VHF不受控制的前置级低噪声和低交叉调制。 特点 高转换频率 低失真

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF579
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