集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC
Collector Current(IC) | 25mA |
截止频率fT
Transtion Frequency(fT) | 380MHz |
直流电流增益hFE
DC Current Gain(hFE) | 65~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistors Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion Low output conductance |
| 描述与应用 | NPN硅RF晶体管 适用于共射RF，IF放大器 低集电极 - 基电容由于与盾扩散 低输出电导 |