集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 70mA |
截止频率fT
Transtion Frequency(fT) | 9Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 120~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 300mW/0.3W |
| Description & Applications | • NPN 9 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes |
| 描述与应用 | •NPN9 GHz的宽带晶体管 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保 •出色的可靠性。 NPN硅平面外延 晶体管，用于应用程序 在GHz范围内的RF前端， 如模拟和数字蜂窝 电话机，无绳电话 （CT1，CT2，DECT等），雷达 探测器，传呼机和卫星电视 调谐器（SATV），的和中继 在光纤系统中的放大器。 |