集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 4.5V |
集电极连续输出电流IC
Collector Current(IC) | 80mA |
截止频率fT
Transtion Frequency(fT) | 30GHz |
直流电流增益hFE
DC Current Gain(hFE) | 50~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms= 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line |
| 描述与应用 | NPN硅RF晶体管 •对于最高增益低噪声放大器在1.8 GHz •杰出GMS= 21分贝 噪声系数F =0.9分贝 •高可靠性的黄金金属 •45 - SIEGET线 |