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Parameters:

  • Model:BFR193W
  • Manufacturer:HUABAN
  • Date Code:05+ 01+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:RC
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
80mA
截止频率fT
Transtion Frequency(fT)
8Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
580mW/0.58W
Description & ApplicationsNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers T = 8 GHz F = 1.3 dB at 900 MHz
描述与应用NPN硅RF晶体管 低噪声,高增益放大器高达2 GHz 对于线性宽带放大器 T = 8 GHz F = 1.3 dB at 900 MHz

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFR193W
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