集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 90 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 300mW/0.3W |
| Description & Applications | NPN 6 GHz wideband transistor Features Very high power gain Low noise figure Very low intermodulation distortion Applications RF wideband amplifiers and oscillators |
| 描述与应用 | NPN6 GHz的宽带晶体管 特点 非常高的功率增益 低噪声系数 非常低的互调失真 应用 射频宽带放大器和振荡器 |