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Parameters:

  • Model:BFT25
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:V1P
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
8V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5V
集电极连续输出电流IC
Collector Current(IC)
6.5mA
截止频率fT
Transtion Frequency(fT)
2.3GHz
直流电流增益hFE
DC Current Gain(hFE)
40
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
30mW
Description & ApplicationsNPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc.The transistor features low current consumption (100 uA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
描述与应用2 GHz的宽带晶体管NPN 说明 NPN晶体管在一个塑料SOT23信封。 它的主要目的是利用低功耗射频放大器,如在口袋里的手机,传呼系统等。晶体管具有低电流消耗(100uA到1 mA),由于其高转换频率,它还具有优异的宽带性能和低噪声高频率。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFT25
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